smb10(8)j5.0(c)a thru smb10(8)j40(c)a www.vishay.com vishay general semiconductor revision: 12-nov-12 1 document number: 88422 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high power density surface mount t rans z orb ? transient voltage suppressors features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in uni-directional and bi-directional ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automo tive, and telecommunication. mechanical data case: do-214aa (smbj) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-compliant, commercial grade base p/nhe3 - rohs-complia nt, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: for uni-directional types the color band denotes cathode end, no marking on bi-directional types notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal primary characteristics v br (uni-directional) 6.4 v to 49.1 v v br (bi-directional) 6.4 v to 49.1 v v wm 5.0 v to 40 v p ppm (uni-directional) 1000 w p ppm (bi-directional) 800 w p d 100 w i fsm (uni-directional only) 100 a t j max. 150 c polarity uni-directional, bi-directional package do-214aa (smbj) do-214aa (smb) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse powe r dissipation with a 10/1000 s waveform (1)(2) (fig. 1) uni-directional p ppm 1000 w bi-directional 800 peak pulse current with a 10/1000 s waveform (1) i ppm see next table a peak forward surge current 8.3 ms si ngle half sine-wave uni-directional only (2) p d 100 w operating junction and storage temperature range t j , t stg - 55 to 150 c
smb10(8)j5.0(c)a thru smb10(8)j40(c)a www.vishay.com vishay general semiconductor revision: 12-nov-12 2 document number: 88422 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 uni-directional notes (1) pulse test: t p ? 50 ms (2) surge current waveform per fi g. 3 and derate per fig. 2 (3) all terms and symbols are cons istent with ansi/ieee c62.35 (4) v f = 3.5 v at i f = 50 a (uni-dir ectional only) electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) maximum peak pulse surge current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) min. max. smb10j5.0a 1ae 6.40 7.07 10 5.0 1000 108.7 9.2 smb10j6.0a 1ag 6.67 7.37 10 6.0 1000 97.1 10.3 smb10j6.5a 1ak 7.22 7.98 10 6.5 500 89.3 11.2 smb10j7.0a 1am 7.78 8.60 10 7.0 200 83.3 12.0 smb10j7.5a 1ap 8.33 9.21 1.0 7.5 100 77.5 12.9 smb10j8.0a 1ar 8.89 9.83 1.0 8.0 50 73.5 13.6 smb10j8.5a 1at 9.44 10.4 1.0 8.5 20 69.4 14.4 smb10j9.0a 1av 10.0 11.1 1.0 9.0 10 64.9 15.4 smb10j10a 1ax 11.1 12.3 1.0 10 5.0 58.8 17.0 smb10j11a 1az 12.2 13.5 1.0 11 5.0 54.9 18.2 smb10j12a 1be 13.3 14.7 1.0 12 5.0 50.3 19.9 smb10j13a 1bg 14.4 15.9 1.0 13 1.0 46.5 21.5 smb10j14a 1bk 15.6 17.2 1.0 14 1.0 43.1 23.2 smb10j15a 1bm 16.7 18.5 1.0 15 1.0 41.0 24.4 smb10j16a 1bp 17.8 19.7 1.0 16 1.0 38.5 26.0 smb10j17a 1br 18.9 20.9 1.0 17 1.0 36.2 27.6 smb10j18a 1bt 20.0 22.1 1.0 18 1.0 34.2 29.2 smb10j20a 1bv 22.2 24.5 1.0 20 1.0 30.9 32.4 smb10j22a 1bx 24.4 26.9 1.0 22 1.0 28.2 35.5 smb10j24a 1bz 26.7 29.5 1.0 24 1.0 25.7 38.9 smb10j26a 1ce 28.9 31.9 1.0 26 1.0 23.8 42.1 smb10j28a 1cg 31.1 34.4 1.0 28 1.0 22.0 45.4 smb10j30a 1ck 33.3 36.8 1.0 30 1.0 20.7 48.4 smb10j33a 1cm 36.7 40.6 1.0 33 1.0 18.8 53.3 smb10j36a 1cp 40.0 44.2 1.0 36 1.0 17.2 58.1 smb10j40a 1cr 44.4 49.1 1.0 40 1.0 15.5 64.5
smb10(8)j5.0(c)a thru smb10(8)j40(c)a www.vishay.com vishay general semiconductor revision: 12-nov-12 3 document number: 88422 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 bi-directional notes (1) pulse test: t p ? 50 ms (2) surge current waveform per fi g. 3 and derate per fig. 2 (3) all terms and symbols are cons istent with ansi/ieee c62.35 note (1) mounted on minimum recommended pad layout note (1) aec-q101 qualified electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm (3) i d (a) maximum peak pulse surge current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) min. max. smb8j5.0ca 1ae 6.40 7.25 10 5.0 2000 87.0 9.2 smb8j6.0ca 1ag 6.67 7.37 10 6.0 2000 77.7 10.3 smb8j6.5ca 1ak 7.22 7.98 10 6.5 1000 71.4 11.2 smb8j7.0ca 1am 7.78 8.60 10 7.0 400 66.7 12.0 smb8j7.5ca 1ap 8.33 9.21 1.0 7.5 200 62.0 12.9 smb8j8.0ca 1ar 8.89 9.83 1.0 8.0 100 58.8 13.6 smb8j8.5ca 1at 9.44 10.4 1.0 8.5 40 55.6 14.4 smb8j9.0ca 1av 10.0 11.1 1.0 9.0 20 51.9 15.4 SMB8J10CA 1ax 11.1 12.3 1.0 10 10 47.1 17.0 smb8j11ca 1az 12.2 13.5 1.0 11 5.0 44.0 18.2 smb8j12ca 1be 13.3 14.7 1.0 12 5.0 40.2 19.9 smb8j13ca 1bg 14.4 15.9 1.0 13 1.0 37.2 21.5 smb8j14ca 1bk 15.6 17.2 1.0 14 1.0 34.5 23.2 smb8j15ca 1bm 16.7 18.5 1.0 15 1.0 32.8 24.4 smb8j16ca 1bp 17.8 19.7 1.0 16 1.0 30.8 26.0 smb8j17ca 1br 18.9 20.9 1.0 17 1.0 29.0 27.6 smb8j18ca 1bt 20.0 22.1 1.0 18 1.0 27.4 29.2 smb8j20ca 1bv 22.2 24.5 1.0 20 1.0 24.7 32.4 smb8j22ca 1bx 24.4 26.9 1.0 22 1.0 22.5 35.5 smb8j24ca 1bz 26.7 29.5 1.0 24 1.0 20.6 38.9 smb8j26ca 1ce 28.9 31.9 1.0 26 1.0 19.0 42.1 smb8j28ca 1cg 31.1 34.4 1.0 28 1.0 17.6 45.4 smb8j30ca 1ck 33.3 36.8 1.0 30 1.0 16.5 48.4 smb8j33ca 1cm 36.7 40.6 1.0 33 1.0 15.0 53.3 smb8j36ca 1cp 40.0 44.2 1.0 36 1.0 13.8 58.1 smb8j40ca 1cr 44.4 49.1 1.0 40 1.0 12.4 64.5 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance , junction to ambient (1) r ? ja 72 c/ w typical thermal resistance, junction to lead r ? jl 20 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode smb10j5.0a-e3/52 0.106 52 750 7" di ameter plastic tape and reel smb10j5.0a-e3/5b 0.106 5b 3200 13" di ameter plastic tape and reel smb10j5.0ahe3/52 (1) 0.106 52 750 7" diameter plastic tape and reel smb10j5.0ahe3/5b (1) 0.106 5b 3200 13" diameter plastic tape and reel
smb10(8)j5.0(c)a thru smb10(8)j40(c)a www.vishay.com vishay general semiconductor revision: 12-nov-12 4 document number: 88422 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse power or current vs. initial junction temperature fig. 3 - pulse waveform fig. 4 - typical junction capacitance fig. 5 - typical transient thermal impedance fig. 6 - maximum non-repetitive forward surge current smb 8 j5.0c - smb 8 j40ca smb10j5.0 - smb10j40a 0.1 1 10 100 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms p ppm - peak p u lse po w er (kw) t d - p u lse width (s) 0 25 50 75 100 100 75 50 25 0 125 150 175 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % 0 50 100 150 t d 0 1.0 2.0 3.0 4.0 i ppm - peak p u lse c u rrent, % i rsm t - time (ms) t r = 10 s peak val u e i ppm half val u e - i ppm i pp 2 10/1000 s wa v eform as defined by r.e.a. t j = 25 c p u lse width (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 10 000 10 1 bi-directional 100 200 t j = 25 c f = 1.0 mhz v sig = 50 mvp-p meas u red at zero bias v r , meas u red at stand-off voltage v wm c j - j u nction capacitance (pf) v wm - re v erse stand-off voltage (v) 1.0 10 100 0.01 0.1 10 1 100 1000 t p - p u lse d u ration (s) transient thermal impedance (c/w) 10 200 100 100 1 10 nu mber of cycles at 60 hz peak for w ard s u rge c u rrent (a) 8 .3 ms single half sine-wa v e uni-directional only
smb10(8)j5.0(c)a thru smb10(8)j40(c)a www.vishay.com vishay general semiconductor revision: 12-nov-12 5 document number: 88422 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) mounting pad layout 0.0 8 5 (2.159) max. 0.0 8 6 (2.1 8 ) mi n . 0.060 (1.52) mi n . 0.220 ref. do-214aa (smb) cathode band 0.155 (3.94) 0.130 (3.30) 0.012 (0.305) 0.006 (0.152) 0.00 8 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.0 8 4 (2.13) 0.1 8 0 (4.57) 0.160 (4.06) 0.0 8 6 (2.20) 0.077 (1.95)
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